| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,976 pcs
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1976 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The Vishay Dale IRF7807VD1PBF is an N-channel HEXFET Power MOSFET designed for various applications. It offers a drain-source voltage (VDS) of 30V and a low maximum on-resistance (RDS(on)) of 25mΩ at a gate-source voltage (VGS) of 4.5V. The continuous drain current (ID) is rated at 8.3A at 25°C ambient temperature.
This MOSFET includes a co-packaged Schottky diode, making it ideal for synchronous rectifiers in DC-DC converters. It comes in an industry-standard SO-8 package, suitable for surface mounting.
Key electrical characteristics include a typical gate charge (Qg) of 9.5 nC, switch charge (QSW) of 3.4 nC, and output charge (QOSS) of 12 nC. These parameters are important for switching performance in power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the IRF7807VD1PBF is 30V.
The maximum on-resistance (RDS(on)) is 25mΩ when the gate-source voltage (VGS) is 4.5V.
The continuous drain current (ID) is 8.3A at an ambient temperature of 25°C.
The IRF7807VD1PBF is supplied in an SO-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.