| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,990 pcs
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15990 pcs | On Request | 1 | On Request | On Request | 1947/2019/1949/1931 | On Request | On Request |
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The IRF7807TRPBF is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, part of the HEXFET family designed for DC-DC converter applications. It features a drain-source breakdown voltage of 30V and a continuous drain current of 8.3A at 25°C. The device achieves a typical on-resistance of 17mΩ and a maximum of 25mΩ at Vgs=4.5V, enabling low conduction losses.
Optimized for mobile DC-DC converters, the IRF7807TRPBF offers low gate charge (12nC typical, 17nC maximum) and low switching losses, making it suitable for high-frequency operation. Switching times are characterized with typical turn-on delay of 12ns, rise time of 17ns, turn-off delay of 25ns, and fall time of 6ns. The device includes an integrated body diode with a maximum forward voltage of 1.2V.
The MOSFET is supplied in a standard 8-SOIC surface-mount package with Gull Wing leads and 1.27mm lead spacing. It features a lead-free finish verified by the datasheet and is rated for operation from -55°C to 150°C junction temperature.
The maximum drain-source voltage is 30V.
The continuous drain current is 8.3A at 25°C ambient temperature.
The typical on-resistance is 17mΩ and the maximum is 25mΩ at Vgs=4.5V and Id=7A.
The device is supplied in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating temperature range is -55°C to 150°C (junction).
The device is lead-free as indicated in the datasheet. RoHS status is recorded as RoHS3 Compliant but is unverified.
The total gate charge (Qg) is 12nC typical and 17nC maximum at Vgs=5V.