CD4023BM96/CD4023BM96
Texas Instruments
The Texas Instruments CD4023BM96 is a logic gate designed for digital applications. It features RoHS3 compliance and an MSL 1 rating.
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3,322 pcs
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3322 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7807PBF is a 30V power MOSFET from Infineon, designed for low-voltage switching applications. This single MOSFET supports a continuous drain current of 17A at 25°C case temperature and 12A at 100°C. With a maximum on-resistance of 7.5mΩ at VGS=10V and ID=17A, the device minimizes conduction losses.
The gate threshold voltage ranges from 1V to 3V, and the total gate charge is typically 35nC at VDS=15V, ID=17A, VGS=10V. The drain-source breakdown voltage is specified at 30V, and the device can handle pulsed drain currents up to 68A. Gate-source leakage current is limited to 100nA at VGS=±16V.
These electrical characteristics make the IRF7807PBF well-suited for power management and switching applications in a variety of electronic equipment.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V at ID=250µA.
The maximum continuous drain current is 17A at TC=25°C and 12A at TC=100°C.
The maximum on-resistance is 7.5mΩ at VGS=10V and ID=17A.
The gate threshold voltage ranges from 1V to 3V at ID=250µA.
The typical total gate charge is 35nC at VDS=15V, ID=17A, VGS=10V.
The maximum gate-source leakage current is 100nA at VGS=±16V.
The maximum pulsed drain current is 68A.
