| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present | |
| Storage Temperature |
The Vishay Dale IRF7807A is an application-specific N-Channel MOSFET from the HEXFET family, optimized for mobile DC-DC converter applications. It features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 8.3A. The MOSFET exhibits low conduction and switching losses, with an on-resistance (Rds(on)) of 25 MOhm at 4.5V Vgs. Its typical threshold voltage is 1V, and it has a maximum gate-source voltage of 1V. The device is housed in a SOIC package and is designed for SMD mounting.
This MOSFET is suitable for various power management tasks where efficiency and compact design are critical. Its specifications make it a good choice for battery-powered devices and portable electronics requiring stable voltage regulation. The low conduction losses contribute to reduced heat generation, enhancing reliability and system performance.
30V.
SOIC-8 SMD package.
8.3A.
25mΩ maximum at Vgs=4.5V.
66A.
2.5W.
Typically 1V, maximum 1V.