| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 241A | On Request | On Request |
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The IRF7807A from Infineon is an N-Channel MOSFET belonging to the HEXFET family, specifically designed as application-specific MOSFETs ideal for mobile DC-DC converters. This component features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 8.3A. Its on-resistance (Rds(on)) is rated at 25 MOhm when measured at a gate-source voltage (Vgs) of 4.5V.
With a power dissipation (Pd) of 2.5W and a pulse current (Idm) of 66A, the IRF7807A is built for efficient operation, offering low conduction and switching losses. The typical threshold voltage (Vgs) is 1V, with a maximum gate-source voltage specified at 1V for Rds(on) measurement.
Packaged in an 8-pin SOIC surface-mount device (SMD) format, the IRF7807A has a row pitch of 6.3mm and dimensions of 1.75mm in height and 4.05mm in width. Its mounting type is SMD, making it suitable for compact electronic designs. The part is marked with F7807A.
This MOSFET is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions. It is also REACH unaffected and has no SVHC (Substances of Very High Concern) as of December 2010.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the IRF7807A is 30V.
The continuous drain current (Id) for the IRF7807A is 8.3A.
The on-resistance (Rds(on)) of the IRF7807A is 25 MOhm at a Vgs of 4.5V.
The IRF7807A MOSFET is supplied in a SOIC package.
The IRF7807A is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the IRF7807A is 1.