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IRF7807 N-Channel MOSFET, 30V drain-source voltage, 8.3A continuous drain current, 25mΩ on-resistance at 4.5V gate drive. Surface mount SO-8 package.
Mfr Part #:

IRF7807

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 30V drain-source voltage, 8.3A continuous drain current, 25mΩ on-resistance at 4.5V gate drive. Surface mount SO-8 package.
✓ Total Stock: 4,000 pcs
$ Price Range: $0.82

IRF7807 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF7807 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRF7807 Description

Short technical summary and product information.

The IRF7807 is an N-Channel MOSFET from Infineon Technologies, part of the HEXFET chip-set designed for DC-DC converters. It offers low conduction and switching losses, making it ideal for high-efficiency power conversion in mobile applications.

 

Key specifications include a maximum drain-source voltage of 30V, continuous drain current of 8.3A at 25°C, and a low on-resistance of 25mΩ at Vgs=4.5V and Id=7A. The total gate charge is 17nC, enabling fast switching with typical turn-on delay of 12ns, rise time of 17ns, turn-off delay of 25ns, and fall time of 6ns.

 

The device is housed in an 8-SOIC surface mount package with a junction-to-ambient thermal resistance of 50°C/W. Operating junction temperature ranges from -55°C to 150°C. The IRF7807 is lead-free and RoHS compliant as verified by the datasheet.

 

Typical applications include mobile DC-DC converters operating at 3.3V and 5V system voltages, and power management for microprocessors.

IRF7807 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IRF7807 N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRF7807 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF7807 Estimated Pricing

Qty Low High
95+ $0.82 $0.82

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7807 Features

  • N-Channel MOSFET for DC-DC converters.
  • 30V drain-source voltage rating.
  • 8.3A continuous drain current at 25°C.
  • Low 25mΩ on-resistance at 4.5V gate drive.
  • Surface mount SO-8 package.

IRF7807 Applications

  • Ideal for mobile DC-DC converters.
  • Suitable for 3.3V and 5V system voltages.
  • Used in power management for microprocessors.

IRF7807 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V maximum.

What package is the IRF7807 available in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the IRF7807 RoHS compliant?

Yes, the datasheet indicates lead-free and RoHS compliant.

What is the on-resistance?

25mΩ maximum at Vgs=4.5V, Id=7A.

What is the gate charge?

17nC total gate charge at Vgs=5V.

What is the continuous drain current?

8.3A at 25°C ambient temperature.

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