| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,218 pcs
|
3218 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Vishay Dale IRF7805ZTR is an N-Channel MOSFET belonging to the HEXFET® series. It is designed for efficient power switching and control applications.
Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 13A at 25°C. The on-state resistance (Rds On) is a maximum of 11 mOhm at 7A and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is 3V at 250µA, and the maximum gate charge (Qg) is 31nC at 5V.
This MOSFET operates within a temperature range of -55°C to 150°C. It has a maximum power dissipation of 2.5W. The component is housed in an 8-SOIC package and is designed for surface mounting.
Its specifications make it suitable for power management circuits, switching applications, and general-purpose amplification where efficient switching and low on-resistance are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 13A at 25°C.
The maximum Rds On is 11 mOhm at 7A and 4.5V.
The operating temperature range is -55°C to 150°C.
The IRF7805ZTR comes in an 8-SOIC package for surface mounting.