| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7805APBF is an N-Channel power MOSFET manufactured by Infineon Technologies, part of the HEXFET chip-set family designed for DC-DC converter applications. This device employs advanced HEXFET Power MOSFET technology to achieve a balance of on-resistance and gate charge, reducing both conduction and switching losses.
Key electrical specifications include a maximum drain-to-source voltage of 30V, continuous drain current of 13A at 25°C, and a maximum on-resistance of 11mOhm at 4.5V gate drive. The total gate charge is 31nC maximum, with a typical value of 22nC. The device operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at 25°C ambient.
The IRF7805APBF is housed in an 8-SOIC surface mount package with a supplier device package of 8-SO. It is supplied in tape and reel packaging with a standard pack quantity of 4000 pieces. The device is lead-free and RoHS3 compliant.
The maximum drain-source voltage is 30V.
The continuous drain current is 13A at 25°C ambient temperature with Vgs = 10V.
The maximum on-resistance is 11mOhm at Id = 7A and Vgs = 4.5V. Typical on-resistance is 9.2mOhm.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-SOIC surface mount package (8-SO supplier device package).
The device is listed as RoHS3 compliant and is lead-free.
The maximum total gate charge is 31nC at Vgs = 5V. Typical gate charge is 22nC.