| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Gate Charge | |
| Height | |
| Length | |
| Mounting Style | |
| Number of Channels | |
| Technology | |
| Voltage | |
| Width |
The Infineon Technologies IRF7769L2TRPBF is a high-performance N-Channel HEXFET MOSFET designed for various power applications. It features a drain-source voltage rating of 100V and a continuous drain current capability of 124A, making it suitable for demanding tasks.
This MOSFET boasts a low drain-source on-resistance of 2.8 mOhms, contributing to efficient power transfer and reduced heat generation. It operates with a gate-source voltage of 20V and includes key electrical parameters such as gate charge (Qg) of 200 nC, rise time of 32 ns, and fall time of 41 ns.
The IRF7769L2TRPBF is housed in a DirectFET-L8 package, designed for surface mounting (SMD/SMT). Its operating temperature range spans from -55°C to +175°C, providing robustness in various environmental conditions. The packaging options include Cut Tape, MouseReel, and Reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 100V.
The continuous drain current is 124A.
The drain-source on-resistance is 2.8 mOhms.
It is an N-Channel MOSFET.
The package is DirectFET-L8.
The operating temperature range is -55°C to +175°C.