| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,000 pcs
|
24000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7759L2TR1PBF is an N-Channel power MOSFET using Infineon's HEXFET silicon technology in a DirectFET Isometric L8 package. It is rated for a drain-to-source voltage of 75V and a continuous drain current of 26A at 25°C ambient (375A at 25°C case). The device offers a maximum on-resistance of 2.3mΩ at Vgs=10V and Id=96A, with a typical value of 1.8mΩ. Gate charge is 300nC maximum at Vgs=10V, with a typical value of 200nC.
The DirectFET package enables a low profile of less than 0.7mm and supports dual-sided cooling for improved thermal performance. The device is surface-mountable and compatible with existing surface mount techniques. It is optimized for high-frequency switching and synchronous rectification applications, offering low conduction losses and high Cdv/dt immunity.
The IRF7759L2TR1PBF is RoHS compliant, lead-free (qualified up to 260°C reflow), and halogen free. It is supplied in tape and reel packaging with 1000 pieces per reel.
The maximum drain-to-source voltage (Vdss) is 75V.
The maximum continuous drain current is 26A at Ta=25°C.
The maximum on-resistance is 2.3mΩ at Vgs=10V and Id=96A, with a typical value of 1.8mΩ at Vgs=10V.
The junction operating temperature range is -55°C to 175°C.
Yes, the IRF7759L2TR1PBF is RoHS compliant and halogen free.
It uses the DirectFET Isometric L8 package, which is surface mount and has a low profile of less than 0.7mm.