IRF7750TRPBF IRF7750TRPBF is a dual P-channel MOSFET by Infineon with 20V drain-source voltage, 4.7A continuous drain current, and ultra-low on-resistance of 30mΩ. It is packaged in an 8-TSSOP lead-free package.
Mfr Part #:

IRF7750TRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF7750TRPBF is a dual P-channel MOSFET by Infineon with 20V drain-source voltage, 4.7A continuous drain current, and ultra-low on-resistance of 30mΩ. It is packaged in an 8-TSSOP lead-free package.
✓ Total Stock: 12 pcs

IRF7750TRPBF Available from 1 distributor

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IRF7750TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

IRF7750TRPBF Description

Short technical summary and product information.

The IRF7750TRPBF is a dual P-channel HEXFET Power MOSFET from Infineon Technologies (formerly International Rectifier). It features ultra-low on-resistance per silicon area, making it highly efficient for battery and load management applications. The device is rated for a drain-source voltage of -20V and a continuous drain current of ±4.7A at 25°C (VGS = -4.5V), with pulsed current capability up to ±38A.

 

The MOSFET offers a logic level gate with a threshold voltage range of -0.45V to -1.2V, enabling direct drive from low-voltage logic. On-resistance is typically 30mΩ at VGS = -4.5V and 55mΩ at VGS = -2.5V, ensuring low conduction losses. The device is housed in a compact 8-TSSOP package with a low profile (<1.1mm), ideal for space-constrained and thin portable electronics. It is lead-free and available in tape and reel packaging.

 

This dual MOSFET is suitable for a variety of applications including battery management, load switching, and power distribution in portable devices, PCMCIA cards, and other thin-form-factor systems.

IRF7750TRPBF Quick Information

Product Type: MOSFET Array
Series: HEXFET
Canonical Name: IRF7750TRPBF Dual P-Channel MOSFET
Subcategory: Dual P-Channel MOSFET

IRF7750TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF7750TRPBF Features

  • Ultra-low on-resistance of 30mΩ at 4.5V.
  • Dual P-channel MOSFET in compact TSSOP-8 package.
  • Logic level gate for low voltage drive.
  • Lead-free and RoHS compliant.
  • Rated for continuous drain current up to 4.7A.

IRF7750TRPBF Applications

  • Ideal for battery management in portable electronics.
  • Used for load switching in power distribution.
  • Suitable for PCMCIA card power management.
  • Perfect for low-profile thin designs.

IRF7750TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of IRF7750TRPBF?

The drain-source voltage (Vdss) is -20V (absolute value).

What is the continuous drain current rating?

At 25°C with VGS = -4.5V, the continuous drain current is 4.7A. At 70°C, it is 3.8A.

What is the on-resistance (Rds(on))?

Maximum Rds(on) is 30mΩ at VGS = -4.5V and ID = -4.7A, and 55mΩ at VGS = -2.5V and ID = -3.8A.

What package is the IRF7750TRPBF available in?

It is available in an 8-TSSOP (0.173", 4.40mm Width) surface mount package.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

Is the IRF7750TRPBF lead-free and RoHS compliant?

The datasheet states it is lead-free. It is also listed as RoHS3 compliant, though this is unverified from multiple sources.

What is the gate threshold voltage?

The gate threshold voltage (Vgs(th)) is typically -0.45V to -1.2V at VDS = VGS and ID = -250µA.

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