| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,600 pcs
|
4600 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Tape & Reel | |
| Technology |
The Infineon IRF7726TRPBF is a P-channel MOSFET transistor belonging to the HEXFET® technology family. It is designed for applications requiring a unipolar transistor with specific electrical characteristics. This component features a maximum drain-source voltage of -30V and a maximum drain current of -7A. The power dissipation is rated at 1.79W.
The transistor is housed in an SO8 package, suitable for surface-mount device (SMD) applications. The channel type is enhancement mode, providing efficient switching capabilities. This part is supplied on a reel for automated assembly processes.
This P-MOSFET is a component within the broader category of discrete semiconductor products, specifically single transistors. Its specifications make it suitable for power management and switching circuits where a P-channel MOSFET is required.
The drain-source voltage is -30V.
The maximum continuous drain current is -7A.
The power dissipation is 1.79W.
It is a P-MOSFET transistor.
It is supplied in an SO8 package.
The mounting type is SMD.