IRF7705 P-Channel MOSFET with -30V drain-source voltage and -8A continuous drain current. Features ultra-low on-resistance of 18mOhm at -10V gate drive.
Mfr Part #:

IRF7705

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel MOSFET with -30V drain-source voltage and -8A continuous drain current. Features ultra-low on-resistance of 18mOhm at -10V gate drive.
✓ Total Stock: 8,777 pcs
$ Price Range: $1.42

IRF7705 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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8,777 pcs
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IRF7705 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF7705 Description

Short technical summary and product information.

The IRF7705 is a P-Channel power MOSFET from Infineon Technologies, designed for efficient power management in space-constrained applications. It features a maximum drain-to-source voltage of -30V and a continuous drain current of -8.0A at 25°C case temperature. The device achieves an ultra-low on-resistance of 18 mOhm (maximum) at Vgs = -10V, and 30 mOhm typical at Vgs = -4.5V, enabling high efficiency in battery-powered systems.

 

Key electrical characteristics include a typical gate threshold voltage range of -1.0V to -2.5V, input capacitance of 2774 pF, and total gate charge of 88 nC. The MOSFET is capable of handling pulsed drain currents up to -30A and has a maximum power dissipation of 1.5W at 25°C. Switching speeds are characterized with typical turn-on delay of 18 ns and turn-off delay of 270 ns.

 

The device is housed in a compact 8-TSSOP surface-mount package with a low profile of less than 1.2mm, making it suitable for thin portable electronics and PCMCIA cards. It is available in tape and reel packaging for automated assembly. The operating junction temperature range is -55°C to 150°C.

IRF7705 Quick Information

Product Type: MOSFET (Metal Oxide)
Series: HEXFET
Canonical Name: IRF7705 P-Channel MOSFET, -30V, -8A, 8-TSSOP
Subcategory: P-Channel MOSFET

IRF7705 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF7705 Estimated Pricing

Qty Low High
95+ $1.42 $1.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7705 Features

  • Ultra low on-resistance of 18 mOhm.
  • P-Channel MOSFET with -30V rating.
  • Continuous drain current of -8.0A.
  • Surface mount 8-TSSOP package.
  • Low profile less than 1.2mm.

IRF7705 Applications

  • Battery and load management applications.
  • Portable electronics and PCMCIA cards.
  • Power management in thin devices.
  • Low-voltage load switching circuits.

IRF7705 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the IRF7705?

The operating junction temperature range is -55°C to 150°C.

What package does the IRF7705 come in?

The IRF7705 is available in an 8-TSSOP surface mount package (0.173", 4.40mm width).

Is the IRF7705 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

What is the maximum drain-source voltage for the IRF7705?

The maximum drain-source voltage (Vdss) is -30V.

What is the on-resistance of the IRF7705?

The maximum on-resistance is 18 mOhm at Vgs=-10V and Id=-8.0A. Typical on-resistance at Vgs=-4.5V is 30 mOhm.

What is the continuous drain current rating of the IRF7705?

The continuous drain current is -8.0A at Tc=25°C and -6.0A at Tc=70°C with Vgs=-10V.

What is the gate threshold voltage of the IRF7705?

The gate threshold voltage (Vgs(th)) ranges from -1.0V minimum to -2.5V maximum at Id=-250µA.

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