| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7663 is a P-Channel power MOSFET manufactured by Infineon Technologies, originally developed by International Rectifier. It utilizes Trench technology to achieve ultra-low on-resistance per silicon area, making it highly efficient for power management applications.
Key electrical specifications include a maximum drain-source voltage of 20V, continuous drain current of 8.2A at 25°C (6.6A at 70°C), and a maximum on-resistance of 20mΩ at Vgs=-4.5V. The gate threshold voltage ranges from -0.6V to -1.2V, allowing operation at low gate drive voltages. The device also features a total gate charge of 30nC typical and input capacitance of 2520pF.
The IRF7663 is housed in a Micro8 package (8-TSSOP or 8-MSOP), which has half the footprint of a standard SO-8 and a low profile under 1.1mm. This makes it ideal for space-constrained applications such as portable electronics and PCMCIA cards. The device is surface mount and suitable for automated assembly.
| Qty | Low | High |
|---|---|---|
| 80+ | $1.34 | $1.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The IRF7663 is available in an 8-TSSOP or 8-MSOP package, also known as Micro8.
The junction and storage temperature range is -55°C to +150°C.
The IRF7663 is listed as RoHS3 compliant, but this is unverified and conflicts with some sources.
The maximum on-resistance is 20mΩ at Vgs=-4.5V and Id=-7.0A.
The gate threshold voltage ranges from -0.6V to -1.2V.
The continuous drain current is 8.2A at 25°C and 6.6A at 70°C.