| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,762 pcs
|
3762 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel |
The IRF7606TR from Infineon Technologies is a P-Channel MOSFET belonging to the HEXFET® series. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 3.6A at 25°C. The MOSFET features a maximum on-resistance (Rds On) of 90mOhm when conducting 2.4A with a gate-source voltage of 10V.
Designed for surface mounting, the IRF7606TR utilizes a Micro8™ package, specifically an 8-TSSOP or 8-MSOP configuration. Its operating temperature range spans from -55°C to 150°C, making it suitable for various environmental conditions. The input capacitance (Ciss) is a maximum of 520pF at 25V, and the maximum power dissipation is rated at 1.8W.
This MOSFET is suitable for applications requiring efficient switching and power control. Its specifications, including a gate threshold voltage of 1V and a gate charge of 30nC, provide key parameters for circuit design and integration.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the IRF7606TR is 30V.
The continuous drain current (Id) at 25°C for the IRF7606TR is 3.6A.
The maximum Rds On for the IRF7606TR is 90mOhm at a drain current of 2.4A and gate-source voltage of 10V.
The operating temperature range for the IRF7606TR is -55°C to 150°C.
The IRF7606TR is supplied in a Micro8™ package, specifically an 8-TSSOP, 8-MSOP (0.118", 3.00mm Width).