IRF7606TR The Infineon Technologies IRF7606TR is a P-Channel MOSFET with a 30V drain-to-source voltage and a continuous drain current of 3.6A at 25°C. It is designed for surface mounting.
Mfr Part #:

IRF7606TR

Available from 1 distributors
Mfr Name: INTERNATIONAL
INTERNATIONAL
The Infineon Technologies IRF7606TR is a P-Channel MOSFET with a 30V drain-to-source voltage and a continuous drain current of 3.6A at 25°C. It is designed for surface mounting.
✓ Total Stock: 3,762 pcs
$ Price Range: $2.93

IRF7606TR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,762 pcs
3762 pcs On Request 1 On Request On Request On Request On Request On Request

IRF7606TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel

IRF7606TR Description

Short technical summary and product information.

The IRF7606TR from Infineon Technologies is a P-Channel MOSFET belonging to the HEXFET® series. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 3.6A at 25°C. The MOSFET features a maximum on-resistance (Rds On) of 90mOhm when conducting 2.4A with a gate-source voltage of 10V.

 

Designed for surface mounting, the IRF7606TR utilizes a Micro8™ package, specifically an 8-TSSOP or 8-MSOP configuration. Its operating temperature range spans from -55°C to 150°C, making it suitable for various environmental conditions. The input capacitance (Ciss) is a maximum of 520pF at 25V, and the maximum power dissipation is rated at 1.8W.

 

This MOSFET is suitable for applications requiring efficient switching and power control. Its specifications, including a gate threshold voltage of 1V and a gate charge of 30nC, provide key parameters for circuit design and integration.

IRF7606TR Quick Information

Product Type: MOSFET
Series: HEXFET®
Canonical Name: IRF7606TR P-Channel MOSFET
Subcategory: FETs, MOSFETs - Single

IRF7606TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF7606TR Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7606TR Features

  • P-Channel MOSFET with 30V Vdss.
  • Continuous drain current of 3.6A.
  • Low Rds On of 90mOhm at 2.4A, 10V.
  • Surface mount Micro8™ package.
  • Wide operating temperature range.

IRF7606TR Applications

  • Suitable for power switching circuits.
  • Used in general electronic applications.
  • Ideal for space-constrained designs.
  • Efficient power management solutions.

IRF7606TR FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the IRF7606TR?

The drain-to-source voltage (Vdss) for the IRF7606TR is 30V.

What is the continuous drain current of the IRF7606TR at 25°C?

The continuous drain current (Id) at 25°C for the IRF7606TR is 3.6A.

What is the maximum on-resistance (Rds On) for the IRF7606TR?

The maximum Rds On for the IRF7606TR is 90mOhm at a drain current of 2.4A and gate-source voltage of 10V.

What is the operating temperature range of the IRF7606TR?

The operating temperature range for the IRF7606TR is -55°C to 150°C.

What package type is the IRF7606TR MOSFET supplied in?

The IRF7606TR is supplied in a Micro8™ package, specifically an 8-TSSOP, 8-MSOP (0.118", 3.00mm Width).

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