| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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931 pcs
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931 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7604TR is a P-Channel enhancement-mode MOSFET utilizing fifth-generation HEXFET technology from International Rectifier (now Infineon Technologies). It is designed for efficient power management in space-constrained applications.
Key electrical ratings include a drain-source voltage of -20V, continuous drain current of -3.6A at 25°C, and pulsed drain current up to -19A. The on-resistance is typically 90mΩ at VGS=-4.5V and 130mΩ at VGS=-2.7V. Gate threshold voltage is -0.7V minimum, ensuring logic-level drive compatibility. Switching performance is supported by a typical total gate charge of 13nC and input capacitance of 590pF.
The device is housed in a low-profile Micro8 surface mount package (8-TSSOP/MSOP, 3.00mm width) with a maximum junction-to-ambient thermal resistance of 70°C/W. Operating junction and storage temperature range is -55°C to +150°C. The package allows for thin application environments such as portable electronics and PCMCIA cards.
Typical applications include load switching, battery protection, and power management in portable devices where board space is at a premium.
The maximum drain-source voltage (Vdss) is -20 V.
It is available in an 8-TSSOP or 8-MSOP (0.118", 3.00mm Width) package, also known as Micro8.
The operating junction and storage temperature range is -55°C to +150°C.
The RoHS status is listed as RoHS3 compliant, but this is unverified.
The minimum gate threshold voltage is -0.70 V at VDS=VGS, ID=-250µA.
The maximum drain-source on-resistance is 90 mΩ at VGS=-4.5V, ID=-2.4A.
The maximum continuous drain current is -3.6 A at TA=25°C with VGS=-4.5V.