| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
85 pcs
|
85 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present | |
| Tape & Reel |
The IRF7601TRPBF is an N-Channel MOSFET from Vishay Dale, part of the HEXFET family. It offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 5.7A at 25°C. The MOSFET has a low on-resistance (Rds On) of 35 mOhm at 3.8A and 4.5V, a gate threshold voltage (Vgs(th)) of 700mV at 250µA, and a gate charge (Qg) of 22nC at 4.5V. Its input capacitance (Ciss) is 650pF at 15V, with a maximum power dissipation of 1.8W.
This component features a logic level gate and is housed in a Micro8 surface mount package, supplied on tape and reel (TR). It is suitable for various electronic switching applications where a compact and efficient MOSFET is required.
Key electrical characteristics include a 20V Vdss, 5.7A Id, and low Rds(on). The logic level gate feature makes it compatible with lower voltage gate drive signals. The Micro8 package is ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
It is available in a Micro8 surface-mount package.
The continuous drain current is 5.7A at 25°C.
The maximum on-resistance is 35mOhm at 3.8A drain current and 4.5V gate voltage.
The maximum gate threshold voltage is 700mV at 250µA drain current.
The typical gate charge is 22nC at 4.5V gate voltage.
The typical input capacitance is 650pF at 15V drain-source voltage.