IRF7534D1 IRF7534D1 is a P-Channel MOSFET with co-packaged Schottky diode from Infineon Technologies. It features -20V drain-source voltage, -4.3A continuous drain current, and ultra-low on-resistance of 0.055Ω.
Mfr Part #:

IRF7534D1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF7534D1 is a P-Channel MOSFET with co-packaged Schottky diode from Infineon Technologies. It features -20V drain-source voltage, -4.3A continuous drain current, and ultra-low on-resistance of 0.055Ω.
✓ Total Stock: 355 pcs

IRF7534D1 Available from 1 distributor

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IRF7534D1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF7534D1 Description

Short technical summary and product information.

The IRF7534D1 is a P-Channel enhancement-mode MOSFET from Infineon Technologies, co-packaged with a Schottky diode (FETKY) in a Micro8 surface mount package. It is designed for low-voltage power management applications, offering an ultra-low on-resistance of 0.055Ω maximum at -4.5V gate drive and -4.3A drain current. The device is rated for a drain-source voltage of -20V and a continuous drain current of -4.3A at 25°C (derated to -3.4A at 70°C).

 

Key electrical characteristics include a gate threshold voltage range of -0.6V to -1.2V, maximum gate-source voltage of ±12V, and typical gate charge of 10nC. The input capacitance is 1066pF maximum at -10V drain-source. The device can dissipate up to 1.25W at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 100°C/W when mounted on a 1-inch square copper pad. Operating junction temperature range is -55°C to 150°C.

 

The integrated Schottky diode features a forward voltage of 0.39V, reducing external component count in switching regulator designs. The Micro8 package (8-TSSOP/8-MSOP) has a low profile of less than 1.1mm, making it ideal for space-constrained portable electronics such as cell phones, PDAs, and other battery-powered devices.

IRF7534D1 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: IRF7534D1 FETKY MOSFET and Schottky Diode
Subcategory: P-Channel MOSFET with Schottky Diode

IRF7534D1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status: REACH Unaffected

IRF7534D1 Features

  • P-Channel MOSFET with co-packaged Schottky diode.
  • Ultra-low on-resistance of 0.055Ω at 4.5V gate drive.
  • Rated for -20V drain-source voltage.
  • Continuous drain current of -4.3A at 25°C.
  • Surface mount Micro8 package for space-constrained designs.

IRF7534D1 Applications

  • Ideal for low-voltage power management in portable devices.
  • Suitable for switching regulators and DC-DC converters.
  • Used in battery-powered applications like cell phones and PDAs.
  • Reduces component count with integrated Schottky diode.

IRF7534D1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of IRF7534D1?

-20V

What is the maximum continuous drain current?

-4.3A at 25°C, -3.4A at 70°C

What is the on-resistance of IRF7534D1?

0.055Ω maximum at -4.5V gate drive and -4.3A drain current.

What package does IRF7534D1 come in?

Micro8 (8-TSSOP, 8-MSOP) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is IRF7534D1 RoHS compliant?

RoHS3 compliant (unverified, low confidence).

Does the IRF7534D1 include an integrated Schottky diode?

Yes, it is co-packaged with a Schottky diode (FETKY) with a forward voltage of 0.39V.

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