| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,449 pcs
|
6449 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| FET Type | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation | |
| Technology |
The Vishay Dale IRF7524D1GTRPBF is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of up to 1.7A at 25°C.
The MOSFET has a maximum on-resistance (Rds(on)) of 270 mOhm at 1.2A and 4.5V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 700mV at 250µA. Key electrical parameters include an input capacitance (Ciss) of 240pF at 15V Vds and a gate charge (Qg) of 8.2nC at 4.5V Vgs.
This component operates within a temperature range of -55°C to 150°C. It is packaged in a Tape & Reel format and designed for surface mounting, utilizing an 8-uSMD package, also described as 8-TSSOP, 8-MSOP (0.118", 3.00mm Width).
The IRF7524D1GTRPBF is built using MOSFET (Metal Oxide) technology and includes a Schottky Diode feature. It is suitable for applications requiring efficient power switching and control.
20V.
The IRF7524D1 is available in 8-uSMD and 8-TSSOP/8-MSOP surface mount packages.
-55°C to 150°C.
700mV at Id=250µA.
270mOhm at Vgs=4.5V, Id=1.2A.
1.7A at Ta=25°C.
1.25W at Ta.