| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,472 pcs
|
1472 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7503TRPBF is a dual N-Channel MOSFET manufactured by Infineon Technologies. It is designed for surface mount applications and is housed in a Micro8 package (8-TSSOP or 8-MSOP).
This device features a logic level gate, allowing it to be driven by low voltage logic signals. Key electrical specifications include a drain-to-source voltage (Vdss) of 30V, a continuous drain current of 2.4A, and a maximum on-resistance of 135mOhm at a gate-source voltage of 10V. The maximum gate threshold voltage is 1V at 250µA drain current.
The IRF7503TRPBF has a maximum power dissipation of 1.25W and an operating junction temperature range of -55°C to 150°C. Its input capacitance is 210pF at a drain-source voltage of 25V, and the total gate charge is 12nC at 10V.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.25 | $0.25 |
| 8,000+ | $0.23 | $0.23 |
| 12,000+ | $0.22 | $0.22 |
| 20,000+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 2.4A.
The maximum on-resistance (Rds(on)) is 135mOhm at a drain current of 1.7A and gate-source voltage of 10V.
It is available in a surface mount Micro8 package, which is an 8-TSSOP or 8-MSOP with a 3.00mm width.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, though this is unverified.
The maximum gate threshold voltage (Vgs(th)) is 1V at a drain current of 250µA.