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IRF7503TR The IRF7503TR is a dual N-channel MOSFET with 30V drain-source breakdown voltage and 2.4A continuous drain current. It features low on-resistance of 135mΩ and comes in a compact Micro8 surface-mount package.
Mfr Part #:

IRF7503TR

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IRF7503TR is a dual N-channel MOSFET with 30V drain-source breakdown voltage and 2.4A continuous drain current. It features low on-resistance of 135mΩ and comes in a compact Micro8 surface-mount package.
Total Stock: 4,000 pcs

IRF7503TR Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

IRF7503TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Fall Time
Gate Charge (Qg) (Max) @ Vgs
Gate-Source Voltage
Id (Maximum @ Tc = 70 °C)
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Junction Temperature Range
Output Capacitance
Power
Pulsed Drain Current
RDS(on) (Maximum @ Vgs=4.5 V, Id=0.85 A)
Rds On (Max) @ Id, Vgs
Reverse Transfer Capacitance
Rise Time
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance Junction-to-Ambient
Turn-Off Delay Time
Turn-On Delay Time
Vgs(th) (Max) @ Id

IRF7503TR Description

Short technical summary and product information.

The IRF7503TR is a dual N-channel MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source breakdown voltage of 30V and a continuous drain current of 2.4A at 25°C. The on-resistance is a maximum of 135mΩ at Vgs=10V and Id=1.7A, with a logic-level gate threshold of 1V.

 

This device is designed for fast switching and low on-resistance per silicon area, making it suitable for power management and load switching applications. The Micro8 package offers a small footprint and low profile (<1.1mm), ideal for space-constrained designs such as portable electronics and PCMCIA cards.

 

The IRF7503TR is surface-mountable and available in tape and reel packaging. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.25W at 25°C.

IRF7503TR Quick Information

Product Type: MOSFET Array
Series: IRF7503
Canonical Name: Dual N-Channel MOSFET, 30V, 2.4A, Micro8
Subcategory: Dual N-Channel MOSFET Array

IRF7503TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF7503TR Features

  • Dual N-channel MOSFET in Micro8 package.
  • 30V drain-source breakdown voltage rating.
  • Low on-resistance of 135mΩ maximum.
  • Logic-level gate drive with 1V threshold.
  • Fast switching with 12nC gate charge.

IRF7503TR Applications

  • Ideal for portable electronics power switching.
  • Suitable for PCMCIA card power management.
  • Used in low-voltage load switching circuits.
  • Good for space-constrained PCB designs.

IRF7503TR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IRF7503TR?

The drain-source breakdown voltage is 30V minimum.

What is the maximum continuous drain current of the IRF7503TR?

The maximum continuous drain current is 2.4A at 25°C and 1.9A at 70°C.

What is the on-resistance of the IRF7503TR?

The maximum on-resistance is 135mΩ at Vgs=10V and Id=1.7A, and 222mΩ at Vgs=4.5V and Id=0.85A.

What is the operating junction temperature range of the IRF7503TR?

The operating junction temperature range is -55°C to 150°C.

What package is the IRF7503TR available in?

The IRF7503TR is available in an 8-TSSOP/8-MSOP surface-mount package, also known as Micro8.

Is the IRF7503TR RoHS compliant?

The RoHS status is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.

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