| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7493TRPBF is an N-channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-frequency DC-DC converter applications. The device features a drain-to-source voltage rating of 80V and a continuous drain current of 9.3A at 25°C case temperature. The maximum drain-to-source on-resistance is 15mΩ at Vgs = 10V, with a typical value of 11.5mΩ.
This MOSFET offers low gate charge (typical 35nC, max 53nC) and fully characterized capacitances, including effective output capacitance, to simplify design. Switching characteristics include typical turn-on delay time of 8.3ns, rise time of 7.5ns, turn-off delay of 30ns, and fall time of 12ns. The device is avalanche-rated, with a maximum avalanche energy of 180mJ and avalanche current of 5.6A.
The IRF7493TRPBF is housed in an 8-SOIC (0.154", 3.90mm width) surface-mount package, also known as 8-SO. It has a maximum power dissipation of 2.5W at 25°C case temperature, with a junction-to-ambient thermal resistance of 50°C/W. The operating junction temperature range is -55°C to 150°C. This part is supplied in tape and reel packaging (TR suffix) for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.32 | $2.32 |
| 10+ | $1.49 | $1.49 |
| 50+ | $1.12 | $1.12 |
| 100+ | $1.00 | $1.00 |
| 500+ | $0.80 | $0.80 |
| 4,000+ | $0.59 | $0.59 |
| 12,000+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 80V.
The continuous drain current is 9.3A at 25°C case temperature and 7.4A at 70°C.
The operating junction temperature range is -55°C to 150°C.
The device is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The part is marked as RoHS3 compliant, but this status is unverified and should be treated as low confidence.
The typical gate charge (Qg) is 35nC, with a maximum of 53nC at Vgs=10V.
The maximum drain-to-source on-resistance is 15mΩ at Vgs=10V and Id=5.6A, with a typical value of 11.5mΩ.