| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,530 pcs
|
1530 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7492 is an N-Channel power MOSFET from Infineon Technologies, designed for high-frequency DC-DC converters. It features a drain-source voltage rating of 200V and a continuous drain current of 3.7A at 25°C. The device has a low on-resistance of 79mΩ maximum at Vgs=10V, which minimizes conduction losses.
This MOSFET is characterized by low gate charge (39nC typical total gate charge) and fast switching speeds, with typical turn-on delay of 15ns and rise time of 13ns. It is fully avalanche rated with a single pulse avalanche energy of 130mJ. The device also includes a body diode with reverse recovery time of 69ns typical.
The IRF7492 is housed in an 8-SOIC surface mount package (0.154" width, 3.90mm width) with a junction-to-ambient thermal resistance of 50°C/W. It is suitable for applications requiring high efficiency and compact design. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 190+ | $2.00 | $2.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V maximum.
3.7A at 25°C, 3.0A at 70°C.
79mΩ maximum at Vgs=10V, Id=2.2A.
-55°C to 150°C.
8-SOIC (0.154", 3.90mm Width).
RoHS3 Compliant (unverified).
39nC typical, 59nC maximum.