| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The IRF7484PBF is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source breakdown voltage of 40V and a continuous drain current of 14A at 25°C. With a maximum on-resistance of 10mΩ at VGS = 7V, this device offers ultra-low conduction losses. Designed for fast switching, it supports repetitive avalanche energy up to 230mJ and has a junction operating temperature range of -55°C to 150°C. The MOSFET incorporates advanced process technology to achieve high efficiency and reliability. The total gate charge is 100nC, and input capacitance is 3520pF. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, it is suitable for space-constrained power management applications. Typical uses include industrial motor drives, DC-DC converters, and load switching.
The minimum drain-source breakdown voltage is 40V.
The device is available in an 8-SOIC (0.154", 3.90mm Width) package.
The junction operating temperature range is -55°C to 150°C.
RoHS3 Compliant per existing data, but compliance has low confidence and is unverified.
The maximum drain-source on-resistance is 10mΩ at VGS = 7V and ID = 14A.
The continuous drain current is 14A at TA = 25°C with VGS = 10V.
The maximum gate threshold voltage is 2V at VDS = VGS and ID = 250µA.