| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7480MTRPBF is a 40V N-Channel Power MOSFET from Infineon Technologies' StrongIRFET family. It delivers a continuous drain current of 217A (silicon limited at 25°C) and up to 330A with double-sided cooling. The device features a maximum on-resistance of 1.2mOhm at 10V gate drive, with a typical value of 0.95mOhm. Gate threshold voltage ranges from 2.1V to 3.9V, and total gate charge is 185nC at 10V. Input capacitance is 6680pF at 25V drain-source voltage. The MOSFET is rated for a maximum power dissipation of 96W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C.
This device is designed for a wide range of power conversion applications including brushed and BLDC motor drives, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectification, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, and DC/AC inverters. It offers improved gate, avalanche, and dynamic dv/dt ruggedness, fully characterized capacitance and avalanche SOA, and enhanced body diode dv/dt and di/dt capability.
The IRF7480MTRPBF is housed in a DirectFET Isometric ME surface-mount package, which provides low thermal resistance (junction-to-case 1.3°C/W, junction-to-PCB 0.75°C/W). It is supplied in tape and reel packaging with a standard pack quantity of 4800 units. The device is RoHS3 compliant and lead-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.17 | $3.17 |
| 10+ | $2.05 | $2.05 |
| 50+ | $1.57 | $1.57 |
| 100+ | $1.42 | $1.42 |
| 500+ | $1.15 | $1.15 |
| 4,800+ | $0.91 | $0.91 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
217A at Tc=25°C (silicon limited), 330A with double-sided cooling.
Maximum 1.2mOhm at 132A, 10V; typical 0.95mOhm.
DirectFET Isometric ME surface-mount package.
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant and lead-free.
Maximum 185nC at 10V.