| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50,000 pcs
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50000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7476 is an N-channel enhancement-mode power MOSFET manufactured by Infineon Technologies. It features a maximum drain-to-source voltage of 12V and a continuous drain current rating of 15A at 25°C with a 10V gate drive. The device provides a maximum on-resistance of 8mΩ at VGS = 4.5V and ID = 15A, and a typical on-resistance of 6.1mΩ at VGS = 2.8V and ID = 12A.
This MOSFET is designed for high-frequency point-of-load synchronous buck converters and power management applications in netcom, computing, and portable systems. It supports gate drive voltages of 2.8V and 4.5V, with maximum gate threshold voltage of 1.9V. The device features fully characterized avalanche voltage and current, with a single-pulse avalanche energy rating of 160mJ.
The IRF7476 is supplied in an 8-pin SOIC (8-SO) surface-mount package with a 0.154" body width. It offers a maximum power dissipation of 2.5W at 25°C ambient and an operating junction temperature range of -55°C to +150°C. The junction-to-ambient thermal resistance is 50°C/W.
The maximum drain-to-source voltage is 12V.
15A at 25°C with VGS = 10V.
Maximum 8mΩ at VGS = 4.5V and ID = 15A; typical 6.1mΩ at VGS = 2.8V and ID = 12A.
-55°C to +150°C junction temperature.
8-SOIC (0.154", 3.90mm width), supplier device package 8-SO.
The IRF7476 is marked as RoHS3 compliant and lead-free; however, the compliance status is unverified.
It supports gate drive voltages of 2.8V and 4.5V, with a maximum gate-source voltage of ±12V.