| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7473TRPBF is an N-Channel enhancement mode power MOSFET from Infineon's HEXFET family. It features a drain-to-source voltage rating of 100V and a continuous drain current of 6.9A at 25°C (5.5A at 70°C). The device offers a low on-resistance of 26mOhm maximum at Vgs=10V and Id=4.1A, enabling high efficiency in power conversion applications.
This MOSFET is designed for high-speed switching with a typical total gate charge of 61nC and input capacitance of 3180pF. The gate threshold voltage ranges from 3.5V to 5.5V, and the maximum gate-to-source voltage is ±20V. It is capable of handling pulsed drain currents up to 55A.
The device is housed in a standard SO-8 (8-SOIC) surface-mount package, suitable for automated assembly. It is lead-free (PbF suffix) and RoHS3 compliant. Typical applications include telecom and datacom 24V/48V input DC-DC converters, motor control, and uninterruptible power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
| 10+ | $1.38 | $1.38 |
| 100+ | $0.94 | $0.94 |
| 500+ | $0.75 | $0.75 |
| 1,000+ | $0.69 | $0.69 |
| 2,000+ | $0.63 | $0.63 |
| 4,000+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-to-source breakdown voltage is 100V.
The maximum continuous drain current is 6.9A at 25°C with Vgs=10V.
The maximum static drain-to-source on-resistance is 26mOhm at Vgs=10V and Id=4.1A.
It is supplied in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating junction and storage temperature range is -55°C to +150°C.
Yes, it is RoHS3 compliant and lead-free (PbF suffix).