| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7473PBF is an N-Channel enhancement-mode power MOSFET from Infineon Technologies' HEXFET family. It is designed for high-speed switching applications and offers a maximum drain-to-source voltage of 100V and a continuous drain current of 6.9A at 25°C. The device features a low static drain-to-source on-resistance of 26mΩ (maximum) at VGS = 10V, enabling efficient power conversion.
This MOSFET is optimized for telecom and data-com 24V and 48V input DC-DC converters, motor control circuits, and uninterruptible power supplies. It provides fast switching performance with typical turn-on delay of 24ns and fall time of 11ns. The gate threshold voltage ranges from 3.5V to 5.5V, and the recommended drive voltage is 10V.
The IRF7473PBF is supplied in a standard SO-8 surface-mount package (8-SOIC) and is lead-free and RoHS compliant. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at 25°C ambient.
The maximum drain-to-source voltage (Vdss) is 100V.
The continuous drain current is 6.9A at 25°C with VGS = 10V.
It is available in an 8-SOIC (SO-8) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the IRF7473PBF is RoHS3 compliant and lead-free.