| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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277 pcs
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277 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRF7473 is a HEXFET® Power MOSFET suitable for telecom and data-com 24 and 48V input DC-DC converters, motor control, and uninterruptible power supplies. It features ultra-low on-resistance, high-speed switching, and improved avalanche ruggedness.
Key electrical specifications include a 100V drain-to-source breakdown voltage and a maximum static drain-to-source on-resistance of 26mΩ at 10V gate-to-source voltage. The continuous drain current is rated at 6.9A at 25°C ambient temperature. It also offers a typical total gate charge of 61nC and a typical reverse recovery time of 55ns.
This MOSFET is housed in a standard SO-8 package. Its operating junction and storage temperature range is -55 to +150°C. The part is designed for high-speed switching applications and provides improved gate charge characteristics and dynamic dv/dt performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the IRF7473 is 6.9A at 25°C with a VGS of 10V.
The drain-to-source breakdown voltage of the IRF7473 is 100V.
The typical static drain-to-source on-resistance of the IRF7473 is 22mΩ at VGS = 10V.
The operating junction and storage temperature range for the IRF7473 is -55 to +150°C.
The IRF7473 is supplied in an SO-8 package.