| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7471PBF is an N-Channel enhancement mode MOSFET from Infineon Technologies, part of the HEXFET power MOSFET family. It features a drain-source voltage (Vdss) of 40V and a continuous drain current of 10A at 25°C ambient temperature. The device offers a low maximum on-resistance of 13mOhm at a gate drive voltage of 10V and 16mOhm at 4.5V, enabling efficient power conversion.
Key electrical characteristics include a gate threshold voltage of 3V maximum, total gate charge of 32nC at 4.5V, and input capacitance of 2820pF at 20V drain-source voltage. The maximum power dissipation is 2.5W at 25°C, and the operating junction temperature range is -55°C to 150°C.
The MOSFET is housed in a standard 8-SOIC surface mount package with dimensions 0.154" x 3.90mm width (supplier device package 8-SO). It is designed for high frequency switching applications such as isolated DC-DC converters for telecom and industrial use, as well as high frequency buck converters for computer processor power regulation. The part is lead-free as indicated by the PbF suffix.
The drain-source voltage (Vdss) is 40V maximum.
The continuous drain current is 10A at 25°C ambient temperature.
The maximum on-resistance is 13mOhm at a gate drive of 10V and 10A drain current, and 16mOhm at 4.5V and 8A.
The operating junction temperature range is -55°C to 150°C.
It comes in an 8-SOIC surface mount package with 0.154" width and 3.90mm body width.
Yes, the part is lead-free, as indicated by the 'PbF' suffix in the part number and datasheet designation.
The maximum gate-source voltage is ±20V.