| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7470PBF is an N-Channel power MOSFET manufactured by Infineon Technologies, using HEXFET technology. It is designed for high-frequency DC-DC converters with synchronous rectification. The device is rated for a maximum drain-source voltage of 40V and a continuous drain current of 10A at 25°C ambient temperature (8.5A at 70°C). The on-resistance is typically 9mΩ at 10V gate drive and 10A, and 14.5mΩ at 2.8V and 5A, enabling efficient low-voltage operation.
Key electrical characteristics include a maximum gate threshold voltage of 2V, total gate charge of 44nC at 4.5V, and input capacitance of 3430pF. The device also features a maximum power dissipation of 2.5W at 25°C and a junction-to-ambient thermal resistance of 50°C/W. The MOSFET is fully characterized for avalanche energy and current, with a maximum single pulse avalanche energy of 300mJ.
The IRF7470PBF is housed in an SO-8 (8-SOIC) surface-mount package with a width of 3.90mm. It is available in tape and reel packaging (not verified). The part is lead-free (PbF) and RoHS compliant (unverified). Typical applications include high-frequency DC-DC converters, synchronous rectification, and other power management circuits.
The maximum drain-source voltage (Vds) is 40V.
The IRF7470PBF is housed in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, also known as 8-SO.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as 'RoHS3 Compliant' but this is unverified.
The typical on-resistance is 9mΩ at VGS=10V, ID=10A, with a maximum of 13mΩ.
The maximum continuous drain current is 10A at TA=25°C with VGS=10V.
The gate threshold voltage ranges from 0.8V (minimum) to 2V (maximum) at VDS=VGS, ID=250µA.