IRF7468TRPBF The IRF7468TRPBF is a 40V N-Channel Power MOSFET from Infineon's HEXFET family. It offers a continuous drain current of 9.4A and low on-resistance of 15.5mΩ max at 10V.
Mfr Part #:

IRF7468TRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IRF7468TRPBF is a 40V N-Channel Power MOSFET from Infineon's HEXFET family. It offers a continuous drain current of 9.4A and low on-resistance of 15.5mΩ max at 10V.
✓ Total Stock: 7 pcs

IRF7468TRPBF Available from 1 distributor

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IRF7468TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF7468TRPBF Description

Short technical summary and product information.

The IRF7468TRPBF is a 40V N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-frequency isolated DC-DC converters and synchronous rectification in telecom and industrial applications, as well as high-frequency buck converters for computer processor power. The device features a maximum drain-to-source voltage of 40V and a continuous drain current of 9.4A at 25°C (7.5A at 70°C). The static drain-to-source on-resistance is typically 11.7mΩ at VGS=10V and ID=9.4A, with a maximum of 15.5mΩ. At 4.5V gate drive, the typical on-resistance is 13.0mΩ at 7.5A. The gate threshold voltage ranges from 0.8V to 2.0V. The device is fully characterized for avalanche energy (160mJ single pulse) and current (8.0A). It is housed in an 8-SOIC surface-mount package (8-SO) with a junction-to-ambient thermal resistance of 50°C/W and a maximum power dissipation of 2.5W at 25°C. The operating junction temperature range is -55°C to +150°C. The part is lead-free (PbF) and RoHS3 compliant.

IRF7468TRPBF Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IRF7468TRPBF N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IRF7468TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: REACH Unaffected
Lead Free: Yes

IRF7468TRPBF Features

  • 40V drain-to-source breakdown voltage.
  • 9.4A continuous drain current at 25°C.
  • Low on-resistance: 15.5mΩ max at 10V.
  • Surface-mount SO-8 package.
  • Lead-free and RoHS3 compliant.

IRF7468TRPBF Applications

  • Used in high-frequency isolated DC-DC converters.
  • Ideal for synchronous rectification in telecom power supplies.
  • Suitable for high-frequency buck converters for processor power.

IRF7468TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRF7468TRPBF?

40V.

What package does the IRF7468TRPBF come in?

8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the operating temperature range of the IRF7468TRPBF?

-55°C to +150°C junction temperature.

Is the IRF7468TRPBF RoHS compliant?

Yes, it is RoHS3 compliant and lead-free (PbF).

What is the continuous drain current rating of the IRF7468TRPBF?

9.4A at 25°C and 7.5A at 70°C.

What is the typical on-resistance of the IRF7468TRPBF?

11.7mΩ typical at VGS=10V, ID=9.4A.

What is the total gate charge of the IRF7468TRPBF?

23nC typical, 34nC maximum at VGS=4.5V.

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