IRF7465TRPBF N-Channel MOSFET, 150V drain-source voltage, 1.9A continuous drain current, surface mount 8-SOIC package.
Mfr Part #:

IRF7465TRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 150V drain-source voltage, 1.9A continuous drain current, surface mount 8-SOIC package.
✓ Total Stock: 4,811 pcs
$ Price Range: $0.23 - $1.10

IRF7465TRPBF Available from 1 distributor

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✓ Non-Authorised
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IRF7465TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF7465TRPBF Description

Short technical summary and product information.

The IRF7465TRPBF is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies, part of the HEXFET power MOSFET family. It is designed for high-frequency DC-DC converter applications and other power switching circuits. The device features a maximum drain-to-source voltage (Vdss) of 150V and a continuous drain current (Id) of 1.9A at 25°C ambient temperature. The static drain-to-source on-resistance (Rds(on)) is at most 280 mOhm at Vgs=10V, Id=1.14A.

 

This MOSFET exhibits fast switching characteristics with typical turn-on delay time of 7 ns, rise time of 1.2 ns, turn-off delay of 10 ns, and fall time of 9 ns under standard test conditions. The gate charge is typically 15 nC at Vgs=10V, and input capacitance is typically 330 pF at Vds=25V. The device is also characterized for avalanche energy with a maximum single-pulse avalanche energy of 40 mJ and a peak diode recovery dv/dt rating of 7.8 V/ns.

 

Packaged in a standard 8-SOIC surface mount package (0.154" width, 3.90mm), the IRF7465TRPBF is suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W at 25°C ambient. The device is lead-free and RoHS compliant per the datasheet, though other compliance statuses are unverified.

IRF7465TRPBF Quick Information

Product Type: Single MOSFET
Series: HEXFET
Canonical Name: IRF7465TRPBF N-Channel MOSFET, 150V, 1.9A, 8-SOIC
Subcategory: N-Channel MOSFET

IRF7465TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free (PbF)

IRF7465TRPBF Estimated Pricing

Qty Low High
1+ $1.10 $1.10
10+ $0.69 $0.69
50+ $0.51 $0.51
100+ $0.45 $0.45
500+ $0.35 $0.35
4,000+ $0.26 $0.26
12,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7465TRPBF Features

  • N-channel MOSFET with 150V drain-source voltage.
  • Low on-resistance of 280 mOhm typical.
  • Fast switching with 7 ns turn-on delay.
  • Surface mount 8-SOIC package.
  • RoHS compliant lead-free device.

IRF7465TRPBF Applications

  • High frequency DC-DC converters.
  • Power management in computing systems.
  • Switching power supplies.
  • Motor control circuits.

IRF7465TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF7465TRPBF?

150V.

What package is the IRF7465TRPBF available in?

8-SOIC (0.154", 3.90mm width) surface mount package.

What is the operating temperature range of this MOSFET?

-55°C to 150°C (junction temperature).

Is the IRF7465TRPBF RoHS compliant?

Yes, it is RoHS3 compliant and lead-free per the datasheet.

What is the on-resistance of the IRF7465TRPBF?

Maximum 280 mOhm at Vgs=10V, Id=1.14A.

What is the gate charge of the IRF7465TRPBF?

Typical 15 nC at Vgs=10V.

What is the continuous drain current rating of the IRF7465TRPBF?

1.9A at 25°C ambient temperature with Vgs=10V.

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