| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7465PBF is an N-Channel enhancement mode Power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-frequency DC-DC converter applications. Key specifications include a maximum drain-to-source voltage of 150V, continuous drain current of 1.9A at 25°C, and a low on-resistance of 280mOhm at Vgs=10V. The gate threshold voltage ranges from 3.0V to 5.5V. The device features fast switching with a typical total gate charge of 15nC and input capacitance of 330pF. It is housed in a surface mount 8-SOIC package and operates over a junction temperature range of -55°C to 150°C. The part is RoHS compliant and lead-free.
| Qty | Low | High |
|---|---|---|
| 3,800+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
Yes, it is RoHS3 compliant and lead-free, as indicated by the PbF suffix in the part number and confirmed by the datasheet.
The maximum drain-to-source voltage (Vdss) is 150V.
The gate threshold voltage ranges from 3.0V (minimum) to 5.5V (maximum) at Id=250µA.
The maximum on-resistance is 280mOhm at Vgs=10V and Id=1.14A.
The maximum continuous drain current is 1.9A at Ta=25°C with Vgs=10V.