| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,362 pcs
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3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7464PBF is an N-channel enhancement mode power MOSFET from Infineon Technologies, designed for high efficiency DC-DC conversion applications. This HEXFET device offers a drain-source breakdown voltage of 200V and continuous drain current capability of 1.2A at 25°C. The maximum on-resistance is 0.73Ω at 10V gate drive.
Featuring low gate charge (14 nC max) and low input capacitance (280 pF typical), the IRF7464PBF enables fast switching performance with typical turn-on delay of 11 ns and turn-off delay of 18 ns. The device is avalanche-rated with single pulse avalanche energy of 68 mJ and repetitive avalanche energy of 0.25 mJ.
Packaged in an industry-standard 8-SOIC (SO-8) surface mount package with a power dissipation of 2.5W at 25°C. Operating junction temperature range is -55°C to 150°C, making it suitable for a wide range of industrial and telecom power supply applications.
200V minimum.
1.2A at TA=25°C with VGS=10V, derated to 1.0A at TA=70°C.
0.73Ω at ID=720mA and VGS=10V.
8-SOIC (0.154", 3.90mm Width) surface mount, supplier device package 8-SO.
-55°C to 150°C junction temperature.
RoHS3 compliant per database record (unverified).
Maximum 5.5V at ID=250µA with VDS=VGS.