| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,600 pcs
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1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7456TRPBF is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-frequency DC-DC converters and synchronous rectification applications. The device offers a maximum drain-to-source voltage of 20V and a continuous drain current of 16A at 25°C.
Key electrical characteristics include an ultra-low maximum on-resistance of 6.5mOhm at 10V gate drive, and 7.5mOhm at 4.5V, enabling high efficiency in low-voltage power conversion. The MOSFET features low gate charge (62nC max) and fast switching speeds with typical turn-on delay of 20ns and rise time of 25ns.
The device is housed in a surface-mount 8-SOIC package with a compact 3.90mm width, suitable for space-constrained designs. It supports an operating junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at 25°C ambient.
The maximum drain-source voltage (Vdss) is 20V.
The continuous drain current is 16A at Ta=25°C with Vgs=10V, and 13A at Ta=70°C.
The maximum on-resistance is 6.5mOhm at Id=16A, Vgs=10V; 7.5mOhm at Id=13A, Vgs=4.5V; and 20mOhm at Id=3.5A, Vgs=2.8V.
It is available in an 8-SOIC surface-mount package with a 3.90mm width.
The operating junction temperature range is -55°C to 150°C.
The gate threshold voltage ranges from 0.6V minimum to 2V maximum at Id=250µA.
The maximum power dissipation is 2.5W at Ta=25°C.