| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14,663 pcs
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14663 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The IRF7456PBF is a HEXFET Power MOSFET designed for high-frequency DC-DC converters with synchronous rectification. It features ultra-low RDS(on) at 4.5V VGS and low gate charge to reduce switching losses.
Key electrical specifications include a 20V drain-source voltage (VDS) and a continuous drain current (ID) of 16A at 25°C ambient temperature with a 10V gate-source voltage (VGS). The static drain-to-source on-resistance (RDS(on)) is as low as 0.0065 Ohm at 10V VGS and 16A ID.
This MOSFET is characterized by its fully characterized avalanche voltage and current, with a single pulse avalanche energy (EAS) of 250 mJ and an avalanche current (IAR) of 16A. It also features fast switching characteristics with typical turn-on delay time of 20 ns and fall time of 52 ns.
The component is housed in a SO-8 package and is suitable for surface mounting. Its operating junction and storage temperature range is from -55°C to +150°C.
The maximum drain-source voltage (Vds) is 20V.
The continuous drain current (Id) is 16A at 25°C with Vgs at 10V.
The static drain-to-source on-resistance (Rds(on)) is 0.0065 Ohm maximum at Vgs = 10V and Id = 16A.
The IRF7456PBF is available in an SO-8 surface-mount package.
The junction and storage temperature range is -55°C to +150°C.