| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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161 pcs
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161 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The IRF7456PBF is a HEXFET Power MOSFET designed for high-frequency DC-DC converters with synchronous rectification. It offers ultra-low RDS(on) at 4.5V VGS and low gate charge to reduce switching losses.
Key electrical specifications include a 20V drain-source voltage (VDS) and a continuous drain current (ID) of 16A at 25°C ambient temperature with a 10V gate-source voltage (VGS). The maximum continuous drain current is 13A at 70°C. It boasts a low static drain-to-source on-resistance of 0.0065 Ω at 10V VGS and 16A ID.
This MOSFET is characterized by its fully characterized avalanche voltage and current, with a single pulse avalanche energy (EAS) of 250 mJ and an avalanche current (IAR) of 16A. The typical gate charge (Qg) is 41 nC, contributing to reduced switching losses.
The IRF7456PBF comes in an SO-8 package suitable for surface mounting. Its thermal resistance junction-to-ambient (RθJA) is 50 °C/W, and it operates within a junction and storage temperature range of -55 to +150°C.
20 V.
SO-8 surface mount package.
-55 to +150 °C.
16 A.
6.5 mΩ.
41 nC.
Yes, with a single pulse avalanche energy of 250 mJ.