| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,308 pcs
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5308 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7453PBF is an N-Channel enhancement mode MOSFET from Infineon Technologies. It features a drain-source voltage rating of 250V and a continuous drain current of 2.2A. The maximum on-resistance is 230mOhm at a gate drive of 10V and 1.3A drain current. The device has a maximum gate charge of 38nC at 10V and an input capacitance of 930pF at 25V drain-source.
This MOSFET is designed for high-voltage switching applications. It can dissipate up to 2.5W at ambient temperature and operates over a junction temperature range of -55°C to 150°C. The threshold voltage is 5.5V maximum at 250µA drain current.
The IRF7453PBF is offered in a surface mount 8-SOIC package with a 0.154" width. The supplier device package is 8-SO. The part is claimed to be RoHS3 compliant, with a moisture sensitivity level of 1 (unlimited). REACH status is unaffected. Note that compliance data is unverified and should be confirmed with the manufacturer.
250V.
2.2A at ambient temperature.
230mOhm at 1.3A drain current and 10V gate drive.
38nC maximum at 10V gate-source voltage.
-55°C to 150°C (junction temperature).
8-SOIC (0.154", 3.90mm width), surface mount.
Claimed RoHS3 compliant, but unverified.