| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,237 pcs
|
18237 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
74 pcs
|
74 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Rise Time (Typ) | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7424TRPBF is a P-Channel power MOSFET from Infineon Technologies, originally designed by International Rectifier. It features a drain-source voltage rating of -30V and a continuous drain current of -11A at 25°C. The device offers ultra-low on-resistance of 13.5mOhm maximum at Vgs = -10V, making it suitable for battery and load management applications. The gate threshold voltage ranges from -1.0V to -2.5V. The MOSFET is housed in an 8-SOIC surface-mount package with gull wing leads, designed for improved thermal performance through a customized leadframe. It is lead-free and RoHS compliant. Typical applications include power management in portable devices, load switching, and battery protection circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.63 | $1.63 |
| 10+ | $1.03 | $1.03 |
| 50+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is -30V.
It comes in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and lead-free.
The maximum on-resistance is 13.5mOhm at Vgs=-10V and Id=11A, and 22mOhm at Vgs=-4.5V and Id=8.8A.
The typical total gate charge is 75nC, with a maximum of 110nC at Vgs=-10V.
The maximum input capacitance (Ciss) is 4030pF at Vds=25V.