| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The Vishay Dale IRF7424PBF is a P-Channel HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, making it an efficient device for battery and load management applications.
Key electrical specifications include a Drain-to-Source Voltage (VDS) of -30V and a maximum continuous drain current (ID) of -11A at TA = 25°C with VGS = -10V. The on-resistance (RDS(on)) is 13.5mΩ maximum at VGS = -10V and ID = -11A. Power dissipation (PD) is rated at 2.5W at TA = 25°C.
The MOSFET is housed in an SO-8 package designed for surface mounting. The package has been modified for enhanced thermal characteristics. It is available in tape and reel packaging and is lead-free.
This device is suitable for various power applications where efficient battery and load management is critical. Its surface mount capability and thermal enhancements make it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDS) for the IRF7424PBF is -30V.
The maximum on-resistance (RDS(on)) of the IRF7424PBF at VGS = -10V and ID = -11A is 13.5mΩ.
The continuous drain current (ID) of the IRF7424PBF at TA = 25°C with VGS = -10V is -11A.
The junction and storage temperature range for the IRF7424PBF is -55°C to +150°C.
The IRF7424PBF is available in an SO-8 surface mount package.