| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The IRF7420TRPBF is a P-Channel enhancement-mode Power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for battery and load management applications requiring high efficiency and compact size.
Key electrical specifications include a maximum drain-to-source voltage of -12V, continuous drain current of -11.5A at 25°C (9.2A at 70°C), and pulsed drain current capability up to -46A. The device achieves ultra low on-resistance: 14mOhm at Vgs=-4.5V, 17.5mOhm at Vgs=-2.5V, and 26mOhm at Vgs=-1.8V. Gate threshold voltage is -0.9V maximum at Id=-250µA.
The MOSFET is housed in a surface-mount 8-SOIC package (0.154", 3.90mm width) with a customized leadframe for enhanced thermal performance. It supports operating junction temperatures from -55°C to 150°C and has a maximum power dissipation of 2.5W at 25°C ambient. The part is lead-free and available in tape and reel packaging.
The maximum drain-source voltage (Vdss) is -12V.
The continuous drain current is -11.5A at Tc=25°C with Vgs=-4.5V.
The maximum on-resistance is 14mOhm at Id=-11.5A and Vgs=-4.5V, 17.5mOhm at Id=-9.8A and Vgs=-2.5V, and 26mOhm at Id=-8.1A and Vgs=-1.8V.
It comes in an 8-SOIC surface mount package (0.154", 3.90mm width) with supplier device package 8-SO.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.