| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7420PBF is a P-Channel power MOSFET from Infineon Technologies (formerly International Rectifier), utilizing advanced HEXFET technology to achieve ultra low on-resistance per silicon area. Key electrical specifications include a maximum drain-source voltage of -12V, continuous drain current of -11.5A at 25°C (Vgs=-4.5V), and a maximum on-resistance of 14mOhm at Vgs=-4.5V. The device supports gate drive voltages of 1.8V and 4.5V, with a gate threshold voltage range of -0.4V to -0.9V. Total gate charge is typically 38nC, and input capacitance is 3529pF at Vds=-10V.
This MOSFET is housed in an 8-SOIC surface mount package (0.154", 3.90mm width) with enhanced thermal characteristics due to a customized leadframe. It is designed for vapor phase, infrared, or wave soldering. The operating junction temperature range is -55°C to 150°C, with maximum power dissipation of 2.5W at 25°C ambient. The device is also available in Tape & Reel packaging for automated assembly.
Typical applications include battery management, load switching, and power distribution in portable electronics and low-voltage systems. The low on-resistance and efficient switching characteristics make it suitable for power management circuits where board space is limited.
-12V maximum.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is listed as RoHS3 Compliant.
14mOhm maximum at Vgs=-4.5V, Id=-11.5A.
-11.5A at 25°C case temperature with Vgs=-4.5V.
-0.4V to -0.9V at Id=-250µA.