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17,020 pcs
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17020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,638 pcs
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1638 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
IRF7413ZTRPBF is an N-Channel enhancement-mode HEXFET power MOSFET manufactured by Infineon Technologies. It is designed for low-voltage power switching applications, with a maximum drain-to-source voltage of 30V and continuous drain current ratings of 13A at 25°C and 10A at 70°C (VGS=10V). The device provides very low on-resistance, typically 8.0mΩ (10mΩ maximum) at VGS=10V and ID=13A, and 10.5mΩ (13mΩ maximum) at VGS=4.5V and ID=10A.
Gate threshold voltage ranges from 1.35V to 2.25V (typical 1.8V), allowing logic-level gate drive. Total gate charge is typically 9.5nC (14nC maximum) at VGS=4.5V, and input capacitance is 1210pF at VDS=15V, which supports fast switching. Typical switching times at VDD=16V, VGS=4.5V and ID=10A include 8.7ns turn-on delay, 6.3ns rise time, 11ns turn-off delay, and 3.8ns fall time. The MOSFET is also characterized for avalanche voltage and current, and is 100% tested for gate resistance.
The device is housed in an industry-standard 8-SOIC (0.154", 3.90mm width) surface-mount package (supplier device package 8-SO) with gull-wing leads. It is suitable for board-level power management in notebooks, graphics cards, POL converters, and computing/networking/telecommunication systems, where it can be used as a control FET or synchronous rectifier. Maximum power dissipation is 2.5W at 25°C ambient (1.6W at 70°C), with junction-to-ambient thermal resistance of 50°C/W and junction-to-drain lead resistance of 20°C/W.
This component is lead-free as stated on the datasheet and operates over a junction temperature range of -55°C to 150°C.
The maximum drain-to-source voltage (VDS) is 30V.
It can handle 13A at TA=25°C and 10A at TA=70°C with VGS=10V.
Rds(on) is 8.0mΩ typical (10mΩ max) at VGS=10V, ID=13A; and 10.5mΩ typical (13mΩ max) at VGS=4.5V, ID=10A.
The operating junction temperature range is -55°C to +150°C.
It is available in an 8-SOIC (0.154", 3.90mm width) surface-mount package, also listed as supplier device package 8-SO.
The part is listed as RoHS3 compliant in the existing database; the datasheet confirms lead-free construction.
The gate threshold voltage ranges from 1.35V minimum to 2.25V maximum, with a typical value of 1.8V.