| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
265 pcs
|
265 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
149 pcs
|
149 pcs | On Request | 1 | On Request | On Request | 1220/1633/1152 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The IRF7413TRPBF is a HEXFET® single N-channel Power MOSFET from Vishay Dale. It utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area, combined with fast switching speeds and a ruggedized device design for efficient and reliable operation.
Key electrical specifications include a 30V drain-to-source voltage (Vds) and a continuous drain current (Ids) of 13A. The ON-resistance (Rds(on)) is 0.011 Ohms at a Vgs of 10V. The gate threshold voltage (Vgs(th)) is typically 3V. Input capacitance (Ciss) is 1800pF at 25V (Vds), with typical rise and fall times of 50ns and 46ns respectively.
This MOSFET has a power dissipation (Pd) of 2.5W at a typical ambient temperature (Ta). It operates within a temperature range of -55°C to 150°C.
The component is housed in a SOIC-8 surface mount package. It is designed for vapour phase, infrared, or wave soldering techniques. The product lifecycle status is active.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
SOIC-8 surface mount package.
-55°C to +150°C.
0.011Ω at Vgs=10V.
13A.
3V typical.
1800pF at Vds=25V.