IRF7413TRPBF N-Channel MOSFET, 30V drain-source voltage, 13A drain current, 11 mOhm on-resistance, 8-SOIC surface mount package.
Mfr Part #:

IRF7413TRPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 30V drain-source voltage, 13A drain current, 11 mOhm on-resistance, 8-SOIC surface mount package.
✓ Total Stock: 1,936 pcs

IRF7413TRPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,576 pcs
1576 pcs On Request 1 On Request On Request 834 On Request On Request
Non-Authorised Inventory information
360 pcs
360 pcs On Request 1 On Request On Request 1001 On Request On Request

IRF7413TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF7413TRPBF Description

Short technical summary and product information.

The IRF7413TRPBF is an N-Channel enhancement-mode MOSFET from Infineon Technologies, built with advanced MOSFET (Metal Oxide) technology. It is designed for low-voltage switching applications requiring high efficiency and compact size.

 

Key electrical specifications include a maximum drain-source voltage (Vdss) of 30V, continuous drain current (Id) of 13A at ambient temperature, and a low maximum on-resistance (Rds(on)) of 11 mOhm when driven at 10V gate voltage with 7.3A drain current. The device features a gate threshold voltage (Vgs(th)) of 3V maximum at 250 µA, gate charge (Qg) of 79 nC at 10V, and input capacitance (Ciss) of 1800 pF at 25V. The recommended drive voltage range is 4.5V to 10V for optimal Rds(on). Maximum power dissipation is 2.5W at ambient temperature, and the operating junction temperature range is -55°C to 150°C.

 

The MOSFET is housed in an industry-standard 8-SOIC surface mount package (0.154" width, 3.90mm body width) with supplier device package designation 8-SO. It is RoHS3 compliant, REACH unaffected, and rated Moisture Sensitivity Level 1 (unlimited) per the provided data, though these compliance values are unverified. The part is suitable for automated assembly in high-volume production.

 

Typical applications include power management, DC-DC converters, load switching, and battery protection circuits in consumer, industrial, and computing systems.

IRF7413TRPBF Quick Information

Product Type: MOSFET
Series: IRF7
Canonical Name: IRF7413TRPBF N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRF7413TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF7413TRPBF Features

  • N-Channel MOSFET for 30V operation.
  • Low on-resistance of 11 mOhm typical.
  • Surface mount 8-SOIC package.
  • Gate charge 79 nC for fast switching.
  • Operating temperature range -55 to 150°C.

IRF7413TRPBF Applications

  • Ideal for power management circuits.
  • Used in DC-DC converters.
  • Suitable for load switching.
  • Applicable in battery protection.

IRF7413TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30V.

What is the package type?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the IRF7413TRPBF RoHS compliant?

Yes, the part is listed as RoHS3 compliant, but this value is unverified.

What is the maximum drain current?

13A (at Ta).

What is the on-resistance?

11 mOhm maximum at 7.3A, 10V gate drive.

What is the gate threshold voltage?

3V maximum at 250 µA drain current.

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