| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,007 pcs
|
3007 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,604 pcs
|
2604 pcs | On Request | 1 | On Request | On Request | 0724P// | On Request | On Request |
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The Vishay Dale IRF7413TR is a single N-channel Power MOSFET. It utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area, combined with fast switching speeds and a ruggedized device design for efficient and reliable operation.
Key electrical specifications include a 30V drain-to-source voltage and a 13A continuous drain current. The ON-resistance (Rds) is rated at 0.011 Ohms. The gate threshold voltage is 3V, and the input capacitance is 1800 pF at 25V.
This MOSFET is designed for surface mount applications and comes in a SOIC-8 package. It operates within a temperature range of -55°C to 150°C. The device is suitable for a wide variety of power applications where efficient and reliable performance is critical.
Features include Generation V technology, ultra-low ON-resistance, dynamic dV/dt rating, fast switching, 100% Rg tested, and low switching losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage for the IRF7413TR is 30V.
The continuous drain current for the IRF7413TR is 13A.
The ON-resistance (Rds) of the IRF7413TR is 0.011 Ohms.
The gate threshold voltage for the IRF7413TR is 3V.
The maximum operating temperature for the IRF7413TR is 150°C.
The IRF7413TR is in a SOIC-8 package.
The IRF7413TR is designed for surface mount.