| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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582 pcs
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582 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The IRF7413 is an N-channel Power MOSFET manufactured by Infineon Technologies, suitable for high-frequency DC-DC converter applications. It offers a continuous drain current of up to 12A at 25°C and a pulsed drain current of 96A. The device boasts a low gate-to-drain charge to reduce switching losses and fully characterized capacitance for simplified design.
Key electrical characteristics include a drain-to-source breakdown voltage of 30V and a static drain-to-source on-resistance of 11mΩ at VGS = 10V. The MOSFET operates within a junction temperature range of -55°C to +150°C and has a power dissipation of 2.5W at 25°C.
Packaged in a SOIC-8 surface-mount case, the IRF7413 is designed for efficient thermal management with a junction-to-ambient thermal resistance of 50°C/W. Its characteristics make it a suitable component for various power management designs requiring reliable switching performance.
The continuous drain current for the IRF7413 at 25°C with VGS at 10V is 12A.
The drain-to-source breakdown voltage of the IRF7413 is 30V.
The IRF7413 is available in a SOIC-8 package.
The operating junction and storage temperature range for the IRF7413 is -55°C to +150°C.
The RoHS status of the IRF7413 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRF7413 is 1 Unlimited.
The REACH status for the IRF7413 is REACH Unaffected.