| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,336 pcs
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2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7410PBF is a P-Channel HEXFET Power MOSFET from Infineon Technologies (originally International Rectifier). It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, making it suitable for battery and load management applications.
Key electrical specifications include a maximum drain-source voltage of 12V, continuous drain current of 16A at 25°C (13A at 70°C), and pulsed drain current of 65A. The on-resistance is 7mΩ maximum at Vgs=-4.5V and Id=-16A, with lower gate drive options: 9mΩ at -2.5V and 13mΩ at -1.8V. Gate threshold voltage ranges from 0.4V to 0.9V, and total gate charge is typically 91nC. Input capacitance is 8676pF at Vds=-10V.
The device is housed in an 8-SOIC surface mount package with gull wing leads, designed for vapor phase, infrared, or wave soldering. Thermal characteristics include a maximum power dissipation of 2.5W at 25°C (1.6W at 70°C) and a junction-to-ambient thermal resistance of 50°C/W. Operating temperature range is -55°C to 150°C.
Typical applications include battery management, load switching, and power management circuits where low on-resistance and efficient switching are required. The part is lead-free and available in tape and reel packaging.
The maximum drain-source voltage (Vds) is 12V.
Continuous drain current is 16A at 25°C and 13A at 70°C with Vgs=-4.5V.
Maximum on-resistance is 7mΩ at Vgs=-4.5V and Id=-16A, 9mΩ at Vgs=-2.5V, and 13mΩ at Vgs=-1.8V.
It comes in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant and lead-free, but this compliance data is unverified.
Gate threshold voltage ranges from 0.4V (minimum) to 0.9V (maximum) at Id=-250µA.