| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
701 pcs
|
701 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF740STRL is an N-Channel power MOSFET from Vishay Siliconix, part of the third-generation power MOSFET family. It offers a drain-source voltage rating of 400V and a continuous drain current of 10A at 25°C. The device features a low on-resistance of 0.55Ω maximum at 10V gate-source voltage, ensuring efficient power switching.
With a total gate charge of 63 nC and input capacitance of 1400 pF, the IRF740STRL is designed for fast switching applications. It is capable of handling high power dissipation up to 125W at the case, and operates over a temperature range of -55°C to 150°C. The single pulse avalanche energy rating is 520 mJ, providing ruggedness in inductive switching environments.
The MOSFET is housed in a D2PAK (TO-263) surface mount package, which offers low internal connection resistance and high power capability. It is suitable for high current applications and is available in tape and reel packaging for automated assembly.
| Qty | Low | High |
|---|---|---|
| 800+ | $2.96 | $2.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
400V.
D2PAK (TO-263) surface mount package.
-55°C to 150°C.
RoHS compliance is unverified; the datasheet mentions both RoHS and non-RoHS variants. Check ordering information for lead-free options.
550 mΩ maximum at 6A and 10V gate-source voltage.
63 nC at 10V gate-source voltage.
520 mJ.